In this context, chemical vapor deposition (CVD) 22, 23 and metal-organic CVD (MOCVD) 7, 24 are the most promising techniques, enabling growth of high quality 2D materials with different thermal budgets on various substrates. While initial demonstrations of prototype devices relied on exfoliated flakes, the 2D community has rapidly transitioned towards the growth of large-area films to address manufacturing needs for any commercial applications. Additionally, 2D FETs have found applications in various emerging technologies such as sensors for internet of things, neuromorphic computing, biomimetic devices, valleytronics, straintronics, and optoelectronic devices 14, 15, 16, 17, 18, 19, 20, 21. Recently, a microprocessor based on MoS 2 FETs was reported 13. Circuit level implementations of 2D FETs such as inverters, logic operators, ring oscillators, and radio-frequency devices have also been achieved 8, 9, 10, 11, 12. In fact, high performance MoS 2 field-effect transistors (FETs) with a contact pitch of 70 nm and 42 nm have already been experimentally demonstrated 6, 7. Molybdenum disulfide (MoS 2) and tungsten disulfide (WS 2), belonging to the family of transition metal dichalcogenides (TMDs), have been studied extensively in this context. Two-dimensional (2D) semiconducting materials beyond graphene 1, 2 are receiving increasing attention owing to their ultra-thin body nature that can mitigate detrimental short-channel effects in aggressively scaled devices through improved electrostatics, enabling them to replace or complement the aging Si technology 3, 4, 5.
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